In June 2025, a domestic research team, in collaboration with a materials company, announced the successful development of high-performance gas-phase silicon dioxide materials suitable for semiconductor chemical mechanical polishing (CMP), promoting the localization process of key materials for chip manufacturing in China. This material, with its ultra-fine particle size, high purity, and high compatibility with silicon-based materials, helps polishing solutions achieve nanoscale surface flatness, meeting the stringent precision requirements of advanced process chips.
In the CMP polishing process, gas-phase silicon dioxide serves as the core abrasive, and its particle size uniformity and chemical stability directly affect the surface quality of the wafer. Experimental data shows that the use of a new type of gas-phase silicon dioxide polishing solution can reduce the surface roughness Ra of glass substrates from 0.9 μ m to 0.12 μ m, a decrease of 86.7%. This achievement is attributed to the precise control of pore structure and surface charge during the material preparation process, effectively avoiding the problem of metal ion contamination easily introduced by traditional abrasives. At the same time, its hardness characteristics similar to silicon-based materials can accurately remove surface protrusions of 0.1-1 μ m, ensuring stable electrical performance of the chip.
At present, the global CMP polishing solution market has long been dominated by a few international companies, and the industrial application of domestically produced silicon dioxide marks a technological breakthrough in China's semiconductor materials field. Industry analysis suggests that with the increasing demand for 7nm and below process chips, high-performance gas-phase silicon dioxide will become a core element in improving the yield of polishing solutions, further promoting the independent and controllable development of China's semiconductor industry chain.