Recently, domestic and foreign research teams jointly announced a major breakthrough in the research and development of new silicon dioxide based memory devices. They have successfully developed a non-volatile memory based on silicon dioxide nanostructures, which can store data for decades and significantly improve read and write speeds. It is expected to bring revolutionary changes to the field of data storage.
This new type of memory utilizes specific defects in silicon dioxide as storage units, and achieves data storage and reading by controlling the charge state of the defects. Compared to traditional memory, this technology has significantly improved power consumption, storage density, and data retention capabilities, especially maintaining good data stability in extreme environments.
This achievement not only opens up a new path for the development of data storage technology, but also provides a solid foundation for the future development of fields such as the Internet of Things, big data, and artificial intelligence. The research team stated that the next step will be to optimize material properties, improve production efficiency, and promote the commercial application of this technology.